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KM4132G512A - 256K X 32Bit X 2 Banks Synchronous Graphic RAM

General Description

The KM4132G512A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 262,144 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Key Features

  • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read Single-bit Write operation.
  • DQM 0-3 for byte masking.
  • Auto & self refresh www. DataSheet4U. com.
  • 32ms refresh period (2K cycle).
  • 100 Pin PQFP, TQ.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM4132G271A 128K x 32Bit x 2 Banks Synchronous Graphic RAM
KM4132G271B 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
KM41256A 256K X 1 Bit Dynamic RAM with Page / Nibble Mode
KM41257A 256K X 1 Bit Dynamic RAM with Page / Nibble Mode
KM4164B 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM4132G512A CMOS SGRAM 16Mbit SGRAM www.DataSheet4U.com 256K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.2 July 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 (Jul. 1999) KM4132G512A Revision History Revision 1.2 (July 14th, 1999) • Remove -10 part. CMOS SGRAM Revision 1.1 (June 23th, 1999) • Add -10 part. Revision 1.0 (June 10th, 1999) - Final Spec • AC values of tRCD/tRP/tRAS/tRC are returned to the number of clock cycles. Those can be also converted to ns unit based values by multiplying the number of clock cycles and clock cycle time of each part together.